utc 2SA1943 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 1 www.unisonic.com.tw qw-r214-006 ,a power amplifier applications features * complementary to utc 2sc5200 * recommended for 100w high fidelity audio frequency amplifier output stage. to-3pl 1:base 2:collector 3:emitter *pb-free plating product number:2SA1943l absolute maximum ratings (t c = 25 ) parameter symbol ratings unit collector-base voltage v cbo -230 v collector-emitter voltage v ceo -230 v emitter-base voltage v ebo -5 v collector current i c -15 a base current i b -1.5 a collector power dissipation (tc=25 ) p c 150 w junction temperature t j 0 ~ +125 storage temperature range t stg -65 ~ +125 electrical characteristics (ta=25 ) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb = -230v, i e =0 -5.0 a emitter cut-off current i ebo v eb = -5v, i c =0 -5.0 a collector-emitter breakdown voltage v (br) ceo i c = -50ma, i b =0 -230 v h fe (1) (note) v ce = -5v, i c = -1a 55 160 dc current gain h fe (2) v ce = -5v, i c = -7a 35 60 collector-emitter saturation voltage v ce (sat) i c = -8a , i b = -0.8a -1.5 -3.0 v base -emitter voltage v be v ce = -5v, i c = -7a -1.0 -1.5 v transition frequency ft v ce = -5v, i c = -1a 30 mhz collector output capacitance cob v cb = -10v, i e =0, f=1mhz 360 pf note: h fe (1) classification, r : 55 ~ 110, o : 80 ~ 160
utc 2SA1943 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 2 www.unisonic.com.tw qw-r214-006 ,a typical characteristics 0 -10 -4 0 -20 -16 -20 -8 -8 -12 -2 -4 -6 collector-emitter voltage, v ce (v) i c - v ce collector current, i c (a) i b = -10ma common emitter t c =25 -30 -40 -50 -100 -150 -200 -250 -400 -600 -800 0 -2.0 -4 0 -25 -16 -20 -1.6 -8 -12 -0.4 -0.8 -1.2 base-emitter voltage, v be (v) i c - v be collector current, i c (a) common emitter v ce = -5v t c =100 25 -0.01 -100 -1 -3 -10 -0.1 -0.3 -0.1 -1 collector current, i c (a) v ce(sat) - i c collector-emitter saturation voltage, v ce(sat) (v) -0.01 -100 -10 -0.1 -1 collector current, i c (a) h fe - i c dc current gain, h fe t c =100 25 -25 common emitter i c / i b = 10 common emitter v ce = -5v 10 0 300 30 100 25 -25 t c =100 -3 -1000 -10 -30 -300 -3 -5 -10 -100 collector-emitter voltage, v ce (v) safe operating area collector current, i c (a) dc operation t c =100 -30 -50 -0.3 -0.5 -0.05 -0.1 -1 -0.03 v ceo max. 100ms 10ms 1ms i c max. (pulsed) single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature. i c max. (continuous)
utc 2SA1943 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 3 www.unisonic.com.tw qw-r214-006 ,a pulse width, t w (s) transient thermal resistance , rth ( /w) 0.1 0.01 10 1 r th - t w 0.001 1000 10 0.01 1 0.1 100 curves should be applied in thermal limited area. (single nonrepetitive pulse) infinte heat sink utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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